27 KB254 KB25 KB200020242012Chaouki, BenazzouzFouzia, ZekkarMahfoud, BenkerriMokhtar, BoudissaMounir, ReffasNasser, Menništevilka:2letnik:46str. 139-144ISSN:1580-2949COBISSID:929962URN:URN:NBN:SI:doc-6ESNQBL6enInštitut za kovinske materiale in tehnologijeMateriali in tehnologijeantimonantimonybakerbakrov silicidcoppercopper silicidediffusiondifrakcija rentgenskih žarkovdifuzijaPVDscanning electron microscopytanke plastithin filmvrstična elektronska mikroskopijaX-ray diffractionEffect of the antimony thin-film deposition sequence on copper-silicon interdiffusion| Vpliv zaporedja nanosa tankih plasti antimona na interdifuzijo baker-silicij|In this work we present a study of the effect of an antimony layer on the interdiffusion and formation of copper silicides while inverting the sequence of Cu and Sb deposition on Si(111) substrates. Thermal evaporation was used to deposit Cu/Sb and Sb/Cu bilayers on a Si(111) substrate heated at 100 °C, without breaking the vacuum. XRD and RBS analysis showed, for samples heat treated at 200 °C and 400 °C, a segregation of the three elements (i.e., Cu, Sb and Si) to the surface and diffusion in bulk ending in the formation of a layer made of a mixture containing the three elements at the samples' surface. After 200 °C annealing, in the Cu/Sb/Si system, we observed the formation of only Cu2Sb, and for the Sb/Cu/si system, there is the formation of the Cu3Si and Cu2Sb phases; after 400 °C annealing, the Cu-Sb-Si mixture is formed by the cohabitation of the Cu3Si silicide and the Cu2Sb intermetallic compound in the Cu/Sb/Si sample and only Cu2Sb in the Sb/Cu/Si sample. For the Cu/Sb/Si sample, annealed at 400 °C, the SEM micrographs exhibit compound formation with crystallites that have a trapezoidal shapeV delu predstavljamo študijo vpliva plasti antimona na interdifuzijo in formiranje bakrovih silicidov pri inverziji zaporedja nanosa Cu in Sb na Si(111)-podlago. Nanos plasti Cu/Sb in Sb/Cu je bil izvršen s termičnim izhlapevanjem na Si(111)-substrat pri 100 °C brez prekinitve vakuuma. XRD- in RBS-analize vzorcev, žarjenih pri 200 °C in 400 °C, so pokazale segregacijo treh elementov (Cu, Sb in Si) na površini podlage in difuzijo masivnega materiala s tvorbo plasti zmesi treh elementov na površini podlage. Po žarjenju sistema Cu/Sb/Si pri 200 °C je bil opažen nastanek Cu2Sb, v sistemu Sb/Cu/Si pa nastanek faz Cu3Si in Cu2Sb. Po žarjenju pri 400 °C je bilo ugotovljeno sobivanje silicida Cu3Si in intermetalne spojine Cu2Sb pri vzorcu Cu/Sb/Si in samo Cu2Sb pri vzorcu Sb/Cu/Si. Pri vzorcu Cu/Sb/Si, žarjenem pri 400 °C, SEM-posnetki kažejo nastanek spojin s kristali trapezoidne oblikeTEXTznanstveno časopisjejournalsSlovenian National E-content AggregatorNational and University Library of SloveniaInštitut za kovinske materiale in tehnologije