{"?xml":{"@version":"1.0"},"edm:RDF":{"@xmlns:dc":"http://purl.org/dc/elements/1.1/","@xmlns:edm":"http://www.europeana.eu/schemas/edm/","@xmlns:wgs84_pos":"http://www.w3.org/2003/01/geo/wgs84_pos","@xmlns:foaf":"http://xmlns.com/foaf/0.1/","@xmlns:rdaGr2":"http://rdvocab.info/ElementsGr2","@xmlns:oai":"http://www.openarchives.org/OAI/2.0/","@xmlns:owl":"http://www.w3.org/2002/07/owl#","@xmlns:rdf":"http://www.w3.org/1999/02/22-rdf-syntax-ns#","@xmlns:ore":"http://www.openarchives.org/ore/terms/","@xmlns:skos":"http://www.w3.org/2004/02/skos/core#","@xmlns:dcterms":"http://purl.org/dc/terms/","edm:WebResource":[{"@rdf:about":"http://www.dlib.si/stream/URN:NBN:SI:DOC-FM62GGS9/4dda1df3-afcf-47ba-ab24-8127872abfb4/PDF","dcterms:extent":"578 KB"},{"@rdf:about":"http://www.dlib.si/stream/URN:NBN:SI:DOC-FM62GGS9/850eec20-2e09-4f91-a171-123a730b6210/TEXT","dcterms:extent":"33 KB"}],"edm:ProvidedCHO":{"@rdf:about":"URN:NBN:SI:DOC-FM62GGS9","dcterms:issued":"2025","dc:creator":"Kunaver, Matevž","dc:format":[{"@xml:lang":"sl","#text":"številka:2"},{"@xml:lang":"sl","#text":"letnik:55"},{"@xml:lang":"sl","#text":"str. 95-102"}],"dc:identifier":["ISSN:0352-9045","DOI:10.33180/InfMIDEM2025.203","COBISSID_HOST:247998211","URN:URN:NBN:SI:doc-FM62GGS9"],"dc:language":"en","dc:publisher":{"@xml:lang":"sl","#text":"Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale"},"dc:source":{"@xml:lang":"sl","#text":"Informacije MIDEM"},"dc:subject":[{"@xml:lang":"en","#text":"circuit simulators"},{"@xml:lang":"sl","#text":"ekvivalentna električna vezja"},{"@xml:lang":"en","#text":"electrochemical impedance spectroscopy"},{"@xml:lang":"sl","#text":"elektrokemična impedančna spektroskopija"},{"@xml:lang":"en","#text":"equivalent electronic circuits"},{"@xml:lang":"sl","#text":"hipotetični elementi vezja"},{"@xml:lang":"en","#text":"hypothetical circuit elements"},{"@xml:lang":"sl","#text":"simulatorji vezij"}],"dc:title":{"@xml:lang":"sl","#text":"Introducing EIS circuit elements in SPICE simulator environment| Vpeljava elemementov ! EIS v SPICE simlator ! vezij|"},"dc:description":[{"@xml:lang":"sl","#text":"This study introduces hypothetical circuit elements, specifically the Constant Phase Element (CPE) and Zeroth-Order Approximation of a RC Circuit (ZARC), into the SPICE circuit simulation environment to enhance Electrochemical Impedance Spectroscopy (EIS) analysis. EIS, a critical method for understanding electrochemical processes in fields such as fuel cell analysis, corrosion studies, and biomaterials, relies on fitting measured impedance curves to Equivalent Electrical Circuit (EEC) models. However, existing approaches require expert knowledge and significant mathematical effort, limiting automation. By integrating CPE and ZARC into SPICE, this work bridges the gap between EIS analysis and advanced automatic circuit design methodologies, enabling efficient model selection and parameter determination. Experimental results demonstrate the accuracy of the implemented elements through a series of case studies, evaluated using Sheppard’s criteria function. This integration marks a significant step toward automated EIS model fitting and optimization, with potential implications for advancing electrochemical and materials research"},{"@xml:lang":"sl","#text":"Ta študija uvaja hipotetične vezne elemente, specifično konstantnofazni element (CPE) in ničelni red približka RC vezja (ZARC), v simulacijsko okolje SPICE za izboljšanje analize elektrokemijske impedančne spektroskopije (EIS). EIS, ključna metoda za razumevanje elektrokemijskih procesov na področjih, kot so analiza gorivnih celic, študije korozije in biomateriali, temelji na ujemanju izmerjenih impedančnih krivulj z modeli ekvivalentnih električnih vezij (EEC). Obstoječi pristopi zahtevajo strokovno znanje in znatno matematično delo, kar omejuje avtomatizacijo. Z integracijo CPE in ZARC v SPICE to delo premošča vrzel med analizo EIS in naprednimi metodologijami samodejne zasnove vezij, kar omogoča učinkovito izbiro modelov in določanje parametrov. Eksperimentalni rezultati potrjujejo natančnost implementiranih elementov skozi serijo študij primerov, ocenjenih s pomočjo Sheppardove funkcije kriterijev. Ta integracija predstavlja pomemben korak proti avtomatiziranemu prilagajanju in optimizaciji modelov EIS, z možnimi vplivi na napredek raziskav na področju elektrokemije in materialov"}],"edm:type":"TEXT","dc:type":[{"@xml:lang":"sl","#text":"znanstveno časopisje"},{"@xml:lang":"en","#text":"journals"},{"@rdf:resource":"http://www.wikidata.org/entity/Q361785"}]},"ore:Aggregation":{"@rdf:about":"http://www.dlib.si/?URN=URN:NBN:SI:DOC-FM62GGS9","edm:aggregatedCHO":{"@rdf:resource":"URN:NBN:SI:DOC-FM62GGS9"},"edm:isShownBy":{"@rdf:resource":"http://www.dlib.si/stream/URN:NBN:SI:DOC-FM62GGS9/4dda1df3-afcf-47ba-ab24-8127872abfb4/PDF"},"edm:rights":{"@rdf:resource":"http://creativecommons.org/licenses/by/4.0/"},"edm:provider":"Slovenian National E-content Aggregator","edm:intermediateProvider":{"@xml:lang":"en","#text":"National and University Library of Slovenia"},"edm:dataProvider":{"@xml:lang":"sl","#text":"Strokovno društvo za mikroelektroniko, elektronske sestavne dele in materiale"},"edm:object":{"@rdf:resource":"http://www.dlib.si/streamdb/URN:NBN:SI:DOC-FM62GGS9/maxi/edm"},"edm:isShownAt":{"@rdf:resource":"http://www.dlib.si/details/URN:NBN:SI:DOC-FM62GGS9"}}}}