URN:NBN:SI:DOC-QX2BN8L92017Selberherr, SiegfriedSverdlov, ViktorWeinbub, Josefdocuments/doc/Q/URN_NBN_SI_doc-QX2BN8L9_001.pdfdocuments/doc/Q/URN_NBN_SI_doc-QX2BN8L9_001.txt447articlestr. 195-2100352-904512057172URN:NBN:SI:doc-QX2BN8L9engStrokovno društvo za mikroelektroniko, elektronske sestavne dele in materialeInformacije MIDEMInClogic-in memorymagnetic random access memorymagnetic tunnel junctionsmagnetni spomin z naključnim dostopommagnetni tunelski spojMRAMnapetostno krmiljen MRAMnavor prenosa vrtilnosti MRAMnon-volatilityrelaksacija vrtilne količinespin field-effect transistorsspin relaxationspin-transfer torque MRAMspintronicsspintronikaspominski logtrajnosttranzistorji z vrtilnim poljemvoltage-controlled MRAMSpintronics as a non-volatile complement to modern microelectronics